GLOBALFOUNDRIES U.S. 2, LLC – $93,038.00/Year

Requires a PhD in electrical and computer engineering, electrical engineering, solid state physics, mathematics, or related field of study plus 2 years of experience in the position offered or 2 years of experience in engineering or related occupation. Requires experience with Semiconductor device physics; Semiconductor Fabrication Process; Heterojunction Bipolar Transistor HBT device design and fabrication process; GaN High Electron Mobility Transistor HEMT device design and fabrication; Designing device layout, mask levels and process flow; Performing physical and electrical device characterization; Measurement and Analysis of DC, sparameter and AC device data; Loadpull characterization of HEMTs; Design of Process Experiments to optimize device performance, planning and managing hardware to meet program schedules, documenting process flows; Advanced CMOS fabrication and process technology; SRAM and product Yield Analysis; Data Analysis using JMP software tools; JMP scripting. Experience may be gained through graduatelevel coursework, research, internship, or teaching.