Must have a Masters degree in Chemical Engineering, Electrical Engineering, Mechanical Engineering, Physics, Chemistry, Materials Science or a related field, plus 2 years of experience in process engineering.br br Of the required experience, must have 1 year of experience in at least 2 of the following Design of Experiment DOE; data analysis; semiconductor fabrication; and, plasma physics, plasma chemistry, or plasma reactors.br br Of the required experience, must have 1 year of experience in at least 3 of the following metrology used in semiconductor processing Transmission Electron Microscopy TEM; Scanning Electron Microscopy SEM; Critical Dimension SEM CDSEM; Energy Dispersive Xray Spectroscopy EDS; Focused Ion Beam FIB; Atomic Force Microscopy AFM; Xray Diffraction XRD; Emission Spectroscopy; Raman Spectroscopy; Spectroscopic Ellipsometry; Quartz PCI; or Fourier Transform Infrared Spectroscopy FTIR.br br Of the required experience, must have 1 year of experience in at least 3 of the following wafer cross section techniques; wafer fabrication processes; ion transport phenomena; dynamic randomaccess memory DRAM; plasma etching; plasma simulation; semiconductor thin film deposition; Atomic Layer Deposition ALD; 3D NAND Flash; Chemical Vapor Deposition CVD; or Plasma Enhanced Chemical Vapor Deposition PECVD.br br Must have at least 1 year of experience in 1 of the following software Matlab; Labview; JMP; Hybrid Plasma Equipment Model HPEM; Mathematica; or Origin.br br Experience may be gained while in graduate school.
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